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july 2015 docid027410 rev 3 1 / 12 this is information on a product in full production. www.st.com STP130N6F7 n - channel 60 v, 4.2 m typ., 80 a stripfet? f7 power mosfet in a to - 220 package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max. i d p tot STP130N6F7 60 v 5.0 m 80 a 160 w ? among the lowest r ds(on) on the market ? excellent figure of merit (fom) ? low c rss /c iss ratio for emi immunity ? high avalanche ruggedness applications ? switching applications description this n - channel power mosfet utilizes stripfet? f7 technology with an enhanced trench gate structure that results in very low on - state resistance, while a lso reducing internal capacitance and gate charge for faster and more efficient switching. table 1: device summary order code marking package packing STP130N6F7 130n6f7 to -220 tube am01475v1_ t ab d(2, t ab) g(1) s(3)
contents STP130N6F7 2 / 12 docid027410 rev 3 contents 1 electrical ratings ............................................................................. 3 2 electrical characteristics ................................................................ 4 2.1 electrical characteristics (curves) ...................................................... 5 3 test circuits ..................................................................................... 7 4 package information ....................................................................... 8 4.1 to - 220 type a package information .................................................. 9 5 revision history ............................................................................ 11
STP130N6F7 electrical ratings docid027410 rev 3 3 / 12 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ds drain - source voltage 60 v v gs gate - source voltage 20 v i d (1) drain current (continuous) at t case = 25 c 80 a drain current (continuous) at t case = 100 c 80 i dm (2) drain current (pulsed) 320 a p tot total dissipation at t case = 25 c 160 w e as (3) single pulse avalanche energy 200 mj t stg storage temperature 175 to -55 c t j operating junction temperature notes: (1) current is limited by package. (2) pulse width is limited by safe operating area. (3) starting t j = 25 c, i d = 20 a, v dd = 40 v. table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case 0.9 4 c/w r thj - amb thermal resistance junction - ambient 62.5
electrical characteristics STP130N6F7 4 / 12 docid027410 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4: static symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 1 ma 60 v i dss zero gate voltage drain current v gs = 0 v, v ds = 60 v 1 a i gss gate - body leakage current v ds = 0 v, v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain - source on- resistance v gs = 10 v, i d = 40 a 4.2 5.0 m table 5: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 v - 2600 - pf c oss output capacitance - 1200 - c rss reverse transfer capacitance - 115 - q g total gate charge v dd = 30 v, i d = 80 a, v gs = 10 v (see figure 14: "gate charge test circuit" ) - 42 - nc q gs gate - source charge - 13.6 - q gd gate - drain charge - 13 - table 6: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 30 v, i d = 40 a, r g = 4.7 , v gs = 10 v (see figure 13: "switching times test circuit for resistive load" and figure 18: "switching time waveform" ) - 24 - ns t r rise time - 44 - t d(off) turn - off delay time - 62 - t f fall time - 24 - table 7: source - drain diode symbol parameter test conditions min. typ. max. unit v sd (1) forward on voltage v gs = 0 v, i sd = 80 a - 1.2 v t rr reverse recovery time i sd = 80 a, di/dt = 100 a/s, v dd = 48 v (see figure 15: "test circuit for inductive load switching and diode recovery times" ) - 50 ns q rr reverse recovery charge - 56 nc i rrm reverse recovery current - 2.2 a notes: (1) pulse test: pulse duration = 300 s, duty cycle 1.5%.
STP130N6F7 electrical characteristics docid027410 rev 3 5 / 12 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteri stics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance
electrical characteristics STP130N6F7 6 / 12 docid027410 rev 3 figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normalized on - resistance vs temperature figure 11 : normalized v(br)dss vs temperature figure 12 : source - drain diode forward characteristics
STP130N6F7 test circuits docid027410 rev 3 7 / 12 3 test circuits figure 13 : switching tim es test circuit for resistive load figure 14 : gate charge test circuit figure 15 : test circuit for inductive load switching and diode recovery times figure 16 : unclamped inductive load test circuit figure 17 : unclamped inductive waveform figure 18 : switching time waveform
package information STP130N6F7 8 / 12 docid027410 rev 3 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st. com . ecopack ? is an st trademark.
STP130N6F7 package information docid027410 rev 3 9 / 12 4.1 to - 220 type a package information figure 19 : to - 220 type a package outline
package information STP130N6F7 10 / 12 docid027410 rev 3 table 8: to - 220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l 13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ?p 3.75 3.85 q 2.65 2.95
STP130N6F7 revision history docid027410 rev 3 11 / 12 5 revision history table 9: document revision history date revision changes 26- jan - 2015 1 first release. 16- jun - 2015 2 datasheet promoted from preliminary data to production data text and formatting edits throughout document in section electrical ratings: - updated table absolute maximum ratings in section electrical characteristics: - updated and renamed table static (was on/off states) - update d table switching times - updated table source drain diode added section electrical characteristics (curves) 08- jul - 2015 3 in section electrical characteristics (curves): - updated figures output characteristics and transfer characteristics
STP130N6F7 12 / 12 docid027410 rev 3 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved

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